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參數(shù)資料
| 型號： | 30A02SS |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, SSFP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 30A02SS |
30A02SS
No.7362-1/4
PNP Epitaxial Planar Silicon Transistor
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
V
Collector-to-Emitter Voltage
VCEO
--30
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--600
mA
Collector Current (Pulse)
ICP
--1.2
A
Collector Dissipation
PC
Mounted on a glass epoxy board (20!30!1.6mm)
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--30V, IE=0
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
200
500
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
520
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
4.7
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--200mA, IB=--10mA
--110
--220
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--200mA, IB=--10mA
--0.9
--1.2
V
Marking : XM
Continued on next page.
Ordering number : ENN7362
30A02SS
O3003 TS IM TA-100698
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[30A02SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
0.07
1.4
0.45
1
3
2
0.3
1.4
0.8
0.1
1
3
2
Top View
Side View
Bottom View
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