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參數(shù)資料
| 型號： | 2SK826 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 3465K |
| 代理商： | 2SK826 |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=18A
-
14
mΩ
VGS=2.5V, ID=9A
-
28
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.5
V
gfs
Forward Transconductance
VDS=5V, ID=18A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±12V
-
±100
nA
Qg
Total Gate Charge
2
ID=18A
-
21
34
nC
Qgs
Gate-Source Charge
VDS=16V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
8.3
-
ns
tr
Rise Time
ID=18A
-
102
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
24
-
ns
tf
Fall Time
RD=0.56Ω
-12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1280
2050
pF
Coss
Output Capacitance
VDS=20V
-
175
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=18A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
17
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9U18GH
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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