參數(shù)資料
型號: 2SK740
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 4/8頁
文件大小: 47K
代理商: 2SK740
2SK740
4
5
4
3
2
1
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
2 A
I
D
= 10 A
PulseTest
D
V
D
0.5
0.2
0.1
0.05
0.005
1.0
2
5
10
50
Drain Current I
D
(A)
0.5
Static Drain to Source on State
Resistance vs. Drain Current
20
0.02
0.01
S
R
D
)
15 V
V
GS
= 10 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
V
= 10 V
Pulse Test
S
R
D
)
2 A
5 A
10 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
1.0
2
2
Drain Current I
D
(A)
F
y
–25°C
Ta = 25°C
75°C
V
= 10 V
Pulse Test
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PDF描述
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參數(shù)描述
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