參數(shù)資料
型號: 2SK662
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
中文描述: 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 33K
代理商: 2SK662
1
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel J unction FET
unit: mm
For low-frequency amplification
I
Features
G
High mutual conductance g
m
G
Low noise type
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
j
T
stg
Ratings
30
30
20
10
150
125
55 to +125
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
30V, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
0.5
0.1
4
4
max
12
100
1.5
Unit
mA
nA
V
mS
pF
pF
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
typ
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
1: Source
2: Drain
3: Gate
EIAJ: SC-70
S-Mini Type Package (3-pin)
2.1±0.1
1
0
0
0
+
0
+
2
1.25±0.1
0.425
0.425
1
3
2
0
0
0
0
0.2±0.1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK666 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 4V V(BR)DSS | 150MA I(D) | MICRO-X