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參數(shù)資料
| 型號： | 2SK665 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-70, SMINI3-G1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SK665 |
1
Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
unit: mm
Marking Symbol: 3O
Internal Connection
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
2.1±0.1
1
0
0
0
+
–
0
+
–
2
1.25±0.1
0.425
0.425
1
3
2
0
0
0
0
0.2±0.1
G
R
1
D
S
R
2
For switching
I
Features
G
High-speed switching
G
Small drive current owing to high input inpedance
G
High electrostatic breakdown voltage
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
20
8
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*3
| Y
fs
|
V
OH
V
SL
R
1
+ R
2*1
t
on*2
t
off*2
*2
t
on
, t
off
measurement circuit
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
GS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200
V
DD
= 5V, V
GS
= 5V, R
L
= 200
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*3
Pulse measurement
*1
Resistance ratio R
1
/R
2
= 1/50
min
40
20
1.5
20
4.5
100
typ
Unit
μ
A
μ
A
V
V
mS
V
V
k
μ
s
μ
s
max
10
80
3.5
50
1
200
1
1
V
out
V
DD
= 5V
V
GS
= 5V
50
200
1
μ
F
V
in
V
out
90%
10%
10%
90%
t
on
t
off
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK666 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 4V V(BR)DSS | 150MA I(D) | MICRO-X |
| 2SK669 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 50V 0.1A SPA |
| 2SK669-AC | 功能描述:MOSFET N-CH 50V 100MA 3SPA RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK672 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SK673 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB |
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