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參數(shù)資料
| 型號： | 2SK4202-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 84 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 189K |
| 代理商： | 2SK4202-S19-AY |
Data Sheet D19229EJ1V0DS
6
2SK4202
PACKAGE DRAWING (Unit: mm)
TO-220
4.8 MAX.
1 2 3
10.2 MAX.
8.7 TYP.
3.6±0.2
4
2.8±0.3
1.52±0.2
0.8±0.1
2.54 TYP.
6.3
MIN.
3.0
TYP.
15.9
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.4±0.2
φ
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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