參數(shù)資料
型號: 2SK4178-S27-AY
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 216K
代理商: 2SK4178-S27-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.0 m
Ω
MAX. (V
GS
= 10 V, I
D
= 30
A)
Low gate to drain charge
Q
GD
= 3.7 nC TYP. (V
DD
= 15 V, I
D
= 30 A)
4.5 V drive available
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4178(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4178-ZK-E1-AY
Note
2SK4178-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
±
48
±
144
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
P
T1
33
W
P
T2
1.0
W
Channel Temperature
T
ch
150
°
C
°
C
A
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
150
23
I
AS
E
AS
52.9
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25
°
C, V
DD
= 15 V, R
G
= 25
Ω
,
V
GS
= 20
0 V, L = 0.1 mH
(TO-251)
(TO-252)
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2SK4178-ZK-E1-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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