參數(shù)資料
型號(hào): 2SK4092-A
元件分類: JFETs
英文描述: 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, MP-88, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 192K
代理商: 2SK4092-A
Data Sheet D18776EJ1V0DS
4
2SK4092
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Current
-
A
0
10
20
30
40
50
0
102030
4050
VGS = 20 V
Pulsed
10 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cur
rent
-
A
0.01
0.1
1
10
100
0
5
10
15
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
G
ate
to
S
our
ce
Cut-off
Voltage
-
V
0
1
2
3
4
5
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Forward
Tran
sfer
A
dmittance
-
S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS = 10 V
Pulsed
75
°C
125
°C
150
°C
Tch =
55°C
25°C
25
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS
(o
n)
-Drai
nto
S
ource
O
n-stat
eRes
ista
nce
-
Ω
0
0.5
1
1.5
2
0
5
10
15
20
Pulsed
ID = 21 A
10 A
VGS - Gate to Source Voltage - V
R
DS
(o
n)
-Drai
nto
S
ource
O
n-stat
eRes
ista
nce
-
Ω
0
0.5
1
1.5
2
0.1
1
10
100
Pulsed
20 V
VGS = 10 V
ID - Drain Current - A
相關(guān)PDF資料
PDF描述
2SK4092-A 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4095-T-AZ 0.5 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK4098LS 7 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4098LS 7 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4119LS 21 A, 400 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK4093 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK4093TZ-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin TO-92 Mod Box 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 1A TO-92
2SK4094 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK4094_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4094-1E 功能描述:MOSFET N-CH 60V 100A TO220-3 制造商:on semiconductor 系列:- 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:邏輯電平柵極,4V 驅(qū)動(dòng) 漏源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):100A(Ta) 不同?Id,Vgs 時(shí)的?Rds On(最大值):5 毫歐 @ 50A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):- 不同 Vgs 時(shí)的柵極電荷(Qg):220nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):12500pF @ 20V 功率 - 最大值:1.75W 工作溫度:150°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220-3 標(biāo)準(zhǔn)包裝:50