參數資料
型號: 2SK4082
元件分類: JFETs
英文描述: 3.5 A, 600 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數: 8/9頁
文件大?。?/td> 292K
代理商: 2SK4082
Data Sheet D18786EJ1V0DS
6
2SK4082
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
IAS
-Sing
le
Aval
anche
Current
-A
0.1
1
10
0.01
0.1
1
10
100
1000
VDD = 150 V
RG = 25
Ω
VGS = 20 → 0 V
Starting Tch = 25
°C
IAS = 2 A
EAS = 240 mJ
L - Inductive Load - H
Ener
gy
Derat
ing
F
actor
-
%
0
20
40
60
80
100
120
25
50
75
100
125
150
VDD = 150 V
RG = 25
Ω
VGS = 20 → 0 V
IAS
≤ 2 A
Starting Tch - Starting Channel Temperature -
°C
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.54±0.2
0.8±0.2
2.54 TYP.
1.47 MAX
12 3
3.0
TYP.
13.5
MAX.
15.87±0.3
3.30±0.20
4.7±0.2
2.76±0.2
0.50±0.1
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the
device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred.
EQUIVALENT CIRCUIT
Body
Diode
Source
Drain
Gate
相關PDF資料
PDF描述
2SK4090(1)-S27-AY 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4090-ZK-E1-AY 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4143-S17-AY 20 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4203LS 18 A, 45 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK707 25 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
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