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參數(shù)資料
| 型號： | 2SK4082-S17-AY |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 600 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 2SK4082-S17-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 2.2
Ω MAX. (VGS = 10 V, ID = 1.8 A)
Low gate charge
QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4082-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±3.5
A
Drain Current (pulse)
Note1
ID(pulse)
±14
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation (TA = 25
°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
2
A
Single Avalanche Energy
Note2
EAS
240
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
2007
(Isolated TO-220)
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PDF描述 |
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| 2SK4082 | 3.5 A, 600 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK4090-ZK-E1-AY | 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4143-S17-AY | 20 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4084LS | 功能描述:MOSFET N-CH 500V 14A TO-220FI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4085LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4085LS_0710 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4085LS_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4085LS-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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