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參數(shù)資料
| 型號： | 2SK4069-ZK-E2-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 229K |
| 代理商： | 2SK4069-ZK-E2-AY |
Data Sheet D18032EJ3V0DS
2
2SK4069
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 7.5 A
5
10
S
RDS(on)1
VGS = 10 V, ID = 15 A
9.4
12
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 15 A
15
21
m
Ω
Input Capacitance
Ciss
860
pF
Output Capacitance
Coss
255
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
90
pF
Turn-on Delay Time
td(on)
14/7.5
ns
Rise Time
tr
13/4.2
ns
Turn-off Delay Time
td(off)
1.9/24
ns
Fall Time
tf
VDD = 12 V, ID = 30 A
VGS = 4.5 V/12 V
RG = 3
Ω
14/4.4
ns
Total Gate Charge
QG1
VDD = 12 V ,VGS = 12 V, ID = 30 A
17
nC
Total Gate Charge
QG2
VDD = 12 V ,VGS = 4.5 V, ID = 30 A
6.7
nC
Gate to Source Charge
QGS
2.4
nC
Gate to Drain Charge
QGD
VDD = 12 V , ID = 30 A
3.2
nC
Gate Resistance
RG
1.5
Ω
Body Diode Forward Voltage
Note
VF(S-D)
IF = 30 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V
29
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
20
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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