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參數(shù)資料
| 型號： | 2SK4035 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 149K |
| 代理商： | 2SK4035 |
Data Sheet D17447EJ1V0DS
2
2SK4035
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
2.5
3.5
4.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 0.25 A
0.2
0.5
S
R
DS(on)
V
GS
= 10 V, I
D
= 0.25 A
3.2
4.5
Input Capacitance
C
iss
V
DS
= 10 V
74
pF
Output Capacitance
C
oss
V
GS
= 0 V
16
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
7
pF
Turn-on Delay Time
t
d(on)
V
DD
= 125 V, I
D
= 0.25 A
7
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
12
ns
Fall Time
t
f
40
ns
Total Gate Charge
Q
G
V
DD
= 200 V
4
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
0.9
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 0.5 A
2
nC
V
F(S-D)
I
F
= 0.5 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 0.5 A, V
GS
= 0 V
42
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
57
nC
Note
Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4035-A | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK4035-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK4035-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin SC-96 T/R |
| 2SK4037 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:470 MHz Band Amplifier Applications |
| 2SK4037(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH PW-X |
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