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參數(shù)資料
| 型號(hào)： | 2SK4035 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 149K |
| 代理商： | 2SK4035 |
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
Low input capacitance
C
iss
= 74 pF TYP.
Low on-state resistance
R
DS(on)
= 4.5
MAX. (V
GS
= 10 V, I
D
= 0.25 A)
Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER
2SK4035
2SK4035-A
Note
Note
Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t
≤
5 sec
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE
SC-96 (Mini Mold Thin Type)
SC-96 (Mini Mold Thin Type)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
250
±30
±0.5
±2.0
0.2
1.25
150
V
V
A
A
W
W
°C
°C
55 to +150
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1.9
2.9 ±0.2
0.95
0
+
–
1. Gate
2. Source
3. Drain
2
1
3
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK4081 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4081-S15-AY | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4081-S27-AY | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4081-ZK-E1-AY | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4081-ZK-E2-AY | SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4035-A | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK4035-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK4035-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin SC-96 T/R |
| 2SK4037 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:470 MHz Band Amplifier Applications |
| 2SK4037(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH PW-X |
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