參數(shù)資料
型號(hào)： 2SK4005-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 13/18頁(yè)
文件大?。?/td> 380K
代理商： 2SK4005-01MR
DW
G.
NO
.
H04-004-03
Fuji Electric Device Technology Co.,Ltd.
MS5F5984
4 / 18
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Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward
I
D=3A
Transconductance gfs
V
DS=25V
4.5
9.0
-
S
Input Capacitance
Ciss
VDS=25V
-
900
1350
Output Capacitance
Coss
V
GS=0V
-
100
150
Reverse Transfer
f=1MHz
5.5
8.5
pF
Capacitance Crss
-
td(on)
Vcc=600V
-
12
18
Turn-On Time
tr
V
GS=10V
-
5.6
8.4
td(off)
I
D=3A
-
38
57
ns
Turn-Off Time
tf
R
GS=
10Ω
-
11.0
17
Total Gate Charge
QG
Vcc=450V
-
25
38
Gate-Source Charge
Q
GS
I
D=6A
-
6.5
9.8
nC
Gate-Drain Charge
Q
GD
V
GS=10V
-
7.0
10.5
Reverse Diode
Description
Symbol
Conditions
min.
typ.
max.
Unit
Diode Forward
IF=6.0A
On-Voltage VSD
V
GS=0V
Tch=25°C
-
0.86
1.30
V
Reverse Recovery
I
F=6.0A
Time trr
VGS=0V
-
1.3
-
μs
Reverse Recovery
-
di
/
dt
=100A/
μs
Charge Qrr
T
ch=25°C
-
8.0
-
μC
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
Unit
Channel to Case
Rth(ch-c)
1.786
C/W
Channel to Ambient
Rth(ch-a)
58
C/W
Note *1 : Tch
150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25
,I
AS=3.0A,L=99mH,Vcc=50V,RG=
50Ω,
SeeFi
g.
1andFi
g.
2
E
AS limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.
Note *4 : I
F
-I
D,
-
di
/
dt
=50A/
μs,
Vcc BV
DSS,Tch
150°C
相關(guān)PDF資料
PDF描述
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