參數(shù)資料
型號(hào): 2SK3991-ZK
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 146K
代理商: 2SK3991-ZK
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MOS FIELD EFFECT TRANSISTOR
2SK3991
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17434EJ2V0DS00 (2nd edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The 2SK3991 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 13.0 m
MAX. (V
GS
= 10
V, I
D
= 15
A)
Low C
iss
: C
iss
= 830 pF TYP.
5 V drive available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
25
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±30
A
I
D(pulse)
±120
A
Total Power Dissipation (T
C
= 25°C)
P
T1
21
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to +150
°C
I
AS
15
A
E
AS
22.5
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3991
TO-251 (MP-3)
2SK3991-ZK
TO-252 (MP-3ZK)
(TO-251)
(TO-252)
The mark
shows major revised points.
相關(guān)PDF資料
PDF描述
2SK3992 SWITCHING N-CHANNEL POWER MOSFET
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2SK3991-ZK-E1-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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2SK3992-ZK-E2-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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