參數(shù)資料
型號: 2SK3919
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關N溝道功率MOSFET
文件頁數(shù): 1/8頁
文件大小: 167K
代理商: 2SK3919
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MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3919
TO-251 (MP-3)
2SK3919-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 5.6 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
Low C
iss
: C
iss
= 2050 pF TYP.
5 V drive available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
25
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±64
A
I
D(pulse)
±256
A
Total Power Dissipation (T
C
= 25°C)
P
T1
36
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to +150
°C
I
AS
27
A
E
AS
73
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
, V
GS
= 20
0 V
(TO-251)
(TO-252)
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