參數(shù)資料
型號(hào): 2SK3899-ZK
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 154K
代理商: 2SK3899-ZK
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MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 5.3 m
MAX. (V
GS
= 10
V, I
D
= 42
A)
R
DS(on)2
= 6.5 m
MAX. (V
GS
= 4.5
V, I
D
= 42 A)
Low C
iss
: C
iss
= 5500 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±84
A
I
D(pulse)
±336
A
Total Power Dissipation (T
C
= 25°C)
P
T1
146
W
Total Power Dissipation (T
A
= 25°C)
P
T2
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V, L = 100
μ
H
3.
R
G
= 25
, T
ch(peak)
150°C
T
stg
55 to +150
°C
E
AS
245
mJ
I
AR
49.5
A
E
AR
245
mJ
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3899-ZK
TO-263 (MP-25ZK)
(TO-263)
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