- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33503 > 2SK3868 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3868 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 209K |
| 代理商： | 2SK3868 |
2SK3868
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
1.3
1.7
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 2.5 A
1.5
3.0
S
Input capacitance
Ciss
550
Reverse transfer capacitance
Crss
7
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
70
pF
Rise time
tr
10
Turn-on time
ton
20
Fall time
tf
10
Switching time
Turn-off time
toff
50
ns
Total gate charge
Qg
16
Gate-source charge
Qgs
10
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
6
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
150
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
0.3
μC
Marking
RL =
90
Ω
0 V
10 V
VGS
VDD 225 V
ID = 2.5 A VOUT
15
Ω
Duty
≤ 1%, tw = 10 μs
Lot No.
Note 4
K3868
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3869 | 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3904 | 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3919-AZ | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。