參數(shù)資料
型號(hào)： 2SK3904
元件分類： JFETs
英文描述： 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-16C1B, SC-65, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 253K
代理商： 2SK3904
2SK3904
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π-MOSVI)
2SK3904
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.2 (typ.)
High forward transfer admittance: Yfs = 9.5 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 k)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
19
Drain current
Pulse
(Note 1)
IDP
76
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
820
mJ
Avalanche current
IAR
19
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 3.79 mH, RG = 25 , IAR = 19 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
216C1B
Weight: 4.6 g (typ.)
1
3
2
相關(guān)PDF資料
PDF描述
2SK3919-AZ 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
2SK3919 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
2SK3919-ZK 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3920-01 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3927-01SJ 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3904(F) 制造商:Toshiba 功能描述:Nch 450V 19A 0.26@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 450V 19A 0.26@10V TO3P(N) Bulk
2SK3905(F) 制造商:Toshiba America Electronic Components 功能描述:
2SK3906(Q) 功能描述:MOSFET MOSFET N-Ch 600V 20A Rdson=0.33Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3907(Q) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN
2SK3911(Q) 制造商:Toshiba 功能描述:Nch 600V 20A 0.32@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 20A TO-3PN
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