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參數(shù)資料
| 型號(hào)： | 2SK3822 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | General-Purpose Switching Device Applications |
| 中文描述： | 通用開關(guān)器件應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 2SK3822 |
2SK3822
No.8014-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8014
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000330
2SK3822
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
mJ
A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
100
±
20
52
208
1.65
75
150
PW
≤
10
μ
s, duty cycle
≤
1%
Allowable Power Dissipation
PD
Tc=25
°
C
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=200
μ
H, IAV=52A
*2 L
≤
200
μ
H, single pulse
Tch
Tstg
EAS
IAV
--55 to +150
338
52
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=26A
ID=26A, VGS=10V
ID=26A, VGS=4V
100
V
μ
A
μ
A
V
S
m
m
1
±
10
2.6
1.2
24
40
19
23
Static Drain-to-Source On-State Resistance
25
32
Marking : K3822
Continued on next page.
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| 2SK3826 | 功能描述:MOSFET N-CH 100V 26A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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