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參數(shù)資料
| 型號： | 2SK3794-Z |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 247K |
| 代理商： | 2SK3794-Z |
Data Sheet D16778EJ3V0DS
2
2SK3794
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 10 A
5
10
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 10 A
35
44
m
Ω
RDS(on)2
VGS = 4.0 V, ID = 10 A
54
78
m
Ω
Input Capacitance
Ciss
VDS = 10 V
760
pF
Output Capacitance
Coss
VGS = 0 V
150
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
71
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 10 A
13
ns
Rise Time
tr
VGS = 10 V
170
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
43
ns
Fall Time
tf
34
ns
Total Gate Charge
QG
VDD = 48 V
17
nC
Gate to Source Charge
QGS
VGS = 10 V
3.0
nC
Gate to Drain Charge
QGD
ID = 10 A
4.7
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 20 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
39
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
62
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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