參數(shù)資料
型號(hào): 2SK3794-Z
元件分類: 小信號(hào)晶體管
英文描述: 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: TO-252, MP-3Z, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 247K
代理商: 2SK3794-Z
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MOS FIELD EFFECT TRANSISTOR
2SK3794
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16778EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2004
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3794 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state resistance
RDS(on)1 = 44 m
Ω MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m
Ω MAX. (VGS = 4.0 V, ID = 10 A)
Low Ciss: Ciss = 760 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±20
A
Drain Current (pulse)
Note1
ID(pulse)
±50
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
23
mJ
Repetitive Avalanche Energy
Note3
EAR
23
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
Ω, VGS = 20 → 0 V
3. IAR
≤ 15 A, Tch ≤ 150°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3794
TO-251 (MP-3)
2SK3794-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
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