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參數(shù)資料
| 型號(hào)： | 2SK3778-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 59 A, 250 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | 2SK3778-01 |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
Ratings
250
250
59
±236
±30
59
1115.2
Unit Remarks
V
V
A
A
V
A
mJ
Note *2
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
E
AR
41
dV
DS
/dt
dV/dt
P
D
20
5
410
2.50
Operating and Storage
Temperature range
T
ch
T
stg
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
Item
2SK3778-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero Gate Voltage Drain Current I
DSS
DS
=250V V
GS
=0V
DS
=200V V
GS
=0V
V
GS
I
D
=29.5A V
GS
=10V
I
D
=29.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=29.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
250
3.0
V
V
μA
nA
m
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.305
50.0
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=150V
I
D
=59A
V
GS
=10V
I
F
=59A V
GS
=0V T
ch
=25°C
I
F
=59A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
mJ
kV/μs
kV/μs
W
°C
°C
5.0
25
250
100
53
43
24
12
3800
530
5400
795
35
40
62
70
20
80
30
25
52.5
60
93
105
30
120
45
38
1.50
1.20
370
4.5
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *3
V
DS
250V
Note *4
Tc=25°C
Ta=25°C
=
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,I
AS
=24A,L=3.25mH,
V
CC
=48V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:I
F
-I
D
, -di/dt=50A/μs,V
CC
BV
DSS
, Tc<
=
Gate(G)
Source(S)
Drain(D)
<
=
<
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