- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371557 > 2SK3772-01 (FUJI ELECTRIC CO LTD) N-CHANNEL SILICON POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3772-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK3772-01 |
1
TO-220AB
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
Ratings
300
300
32
±128
±30
32
597.4
Unit Remarks
V
V
A
A
V
A
mJ
Note *2
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
E
AR
27
dV
DS
/dt
dV/dt
P
D
20
5
270
2.02
Operating and Storage
Temperature range
T
ch
T
stg
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermal characteristics
Item
2SK3772-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V
V
GS
=0V
V
GS
=±30V
I
D
=16A V
GS
=10V
I
D
=16A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MH
V
CC
=180V
I
D
=16A
V
GS
=10V
R
GS
=10
V
CC
=150V
I
D
=32A
V
GS
=10V
I
F
=32A V
GS
=0V T
ch
=25°C
I
F
=32A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
Min. Typ. Max. Units
300
3.0
V
V
μA
μA
nA
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.463
62
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
=600V V
ch
=25°C
=480V V
ch
=125°C
V
DS
=0V
mJ
kV/μs
kV/μs
W
°C
°C
5.0
25
250
100
0.13
0.10
24
1970
335
20
29
7.5
57
7
44.5
18
13.5
0.90
270
3.0
12
2955
502
30
44
11
86
10.5
67
27
20.5
1.50
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *3
V
DS
300V
Note *4
Tc=25°C
Ta=25°C
=
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch=
Note *2:StartingTch=25°C,I
AS
=13A,L= 6.13mH,
V
CC
=48V,R
G
=50
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
=
Note *4:I
F
-I
D
, -di/dt = 50A/
μ
s,V
CC
BV
DSS
,Tch=
=
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3773-01MR | N-CHANNEL SILICON POWER MOSFET |
| 2SK3775-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3776-01 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3777-01R | N-CHANNEL SILICON POWER MOSFET |
| 2SK3778-01 | N-CHANNEL SILICON POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3772-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3773-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3777-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3778-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 43 Milliohms;ID 59A;TO-247;PD 410W;VGS +/-3 |
| 2SK3778-01SC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。