參數(shù)資料
型號： 2SK3770-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： 26 A, 120 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 3/4頁
文件大?。?/td> 93K
代理商： 2SK3770-01MR
3
2SK3770-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
V
G
S(
th)
[V]
Tch [
°C]
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
Vcc=60V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=26A,Tch=25
°C
VGS
[V]
10
0
10
1
10
2
10
1
10
2
10
3
C
[
p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[
A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25 °C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[n
s]
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
I
AS
=11A
I
AS
=16A
I
AS
=26A
EAV
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=26A
相關(guān)PDF資料
PDF描述
2SK3811-ZP 110 A, 40 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3813-Z 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3813 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK3822 52 A, 100 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3829 48 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3770-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3772-01 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:300V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes
2SK3772-01 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB
2SK3773-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3777-01RSC 制造商:Fuji Electric 功能描述:
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