參數(shù)資料
型號(hào)： 2SK3753-01R
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： 13 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 126K
代理商： 2SK3753-01R
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
Continuous Drain Current
ID
±13
Pulsed Drain Current
ID(puls]
±52
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
13
Non-Repetitive
EAS
216.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
95
3.13
Operating and Storage
Tch
+150
Temperature range
Tstg
Isolation Voltage
VISO
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3753-01R
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=6A
VGS=10V
ID=6A
VDS=25V
VCC=300V
ID=6A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.32
40.0
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=12A
VGS=10V
L=2.36mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
600
3.0
5.0
25
250
10
100
0.50
0.65
5.5
11
1600
2400
160
240
7
10.5
18
27
16
24
35
50
815
34
51
12.5
19
11.5
17.5
13
1.00
1.50
0.75
6.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
Note *1
Note *2
VDS 600V
Note *4
Tc=25°C
Ta=25°C
t=60sec. f=60Hz
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Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IL=2.36mH,VCC=60V
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt = 50A/
s,VCC BVDSS,Tch 150°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3753-01RSC 制造商:Fuji Electric 功能描述:
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2SK3756(TE12L,F) 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini
2SK3757(Q) 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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