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參數(shù)資料
| 型號(hào)： | 2SK3750 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | NMP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SK3750 |
2SK3750
No.8284-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405PB MS IM TA-101084
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SK3750
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
The best suited for load switching.
Low ON-resistance.
Low Qg.
Meets radial taping.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
450
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
300
mA
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
1.2
A
Allowable Power Dissipation
PD
1W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=450V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=150mA
145
290
mS
Static Drain-to-Source On-State Resistance
RDS(on)
ID=150mA, VGS=10V
8.6
11.2
Input Capacitance
Ciss
VDS=20V, f=1MHz
130
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
80
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
45
pF
Continued on next page.
Ordering number : ENN8284
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3753-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3754(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3755-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 45A 3-Pin(3+Tab) TO-220 |
| 2SK3756(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini |
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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