- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371557 > 2SK374 (PANASONIC CORP) Silicon N-Channel Junction FET PDF資料下載
參數(shù)資料
| 型號： | 2SK374 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK374 |
1
Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel J unction FET
unit: mm
For low-frequency amplification
For switching
I
Features
G
Low noise-figure (NF)
G
High gate to drain voltage V
GDO
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
Ratings
55
55
55
30
10
200
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS*
I
GSS
V
GDC
V
GSC
g
m
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
30V, V
DS
= 0
I
G
=
100
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k
f = 100Hz
min
1
55
2.5
max
20
10
5
Unit
mA
nA
V
V
mS
pF
pF
dB
typ
80
7.5
6.5
1.9
2.5
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 2B
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15
0.65±0.15
3
1
2
0
0
1
0
+
–
1
+
–
0
0.4±0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3752-01R | N-CHANNEL SILICON POWER MOSFET |
| 2SK3761 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?) |
| 2SK3767 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3771-01MR | N-CHANNEL SILICON POWER MOSFET |
| 2SK3772-01 | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。