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參數(shù)資料
| 型號： | 2SK3749 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING |
| 中文描述： | N溝道MOSFET的高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SK3749 |
Data Sheet D17136EJ1V0DS
2
2SK3749
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
7.0 V, V
DS
= 0 V
±
5.0
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
V
GS(off)
V
DS
= 3.0 V, I
D
= 1.0
μ
A
0.9
1.2
1.5
V
| y
fs
|
V
DS
= 3.0 V, I
D
= 10 mA
20
mS
R
DS(on)1
V
GS
= 2.5 V, I
D
= 10 mA
20
40
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 mA
15
20
Input Capacitance
C
iss
V
DS
= 3.0 V
6.0
pF
Output Capacitance
C
oss
V
GS
= 0 V
8.0
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
1.2
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3.0 V, I
D
= 20 mA
9.0
ns
Rise Time
t
r
V
GS
= 3.0 V
50
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
20
ns
Fall Time
t
f
40
ns
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK375 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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| 2SK3754(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3755-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 45A 3-Pin(3+Tab) TO-220 |
| 2SK3756(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini |
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