參數(shù)資料
型號: 2SK3719
廠商: NEC Corp.
英文描述: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
中文描述: N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐
文件頁數(shù): 3/5頁
文件大?。?/td> 116K
代理商: 2SK3719
Data Sheet D16787EJ2V0DS
3
2SK3719
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
I
D
μ
A
0
200
400
600
800
1000
0
2
4
6
8
10
0 V
0.2 V
0.1 V
V
GS
= 0.2 V
0.1 V
0.3 V
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
G
μ
A
0
10
20
30
40
10
20
30
40
0.2
0.4
0.6
0.8
0.2
0.4
0.6
0.8
V
GS
- Gate to Source Voltage - V
I
D
μ
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
V
DS
= 2.0 V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
i
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
|
f
V
G
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
μ
A
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