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參數(shù)資料
| 型號： | 2SK3716 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 2SK3716 |
Data Sheet D17174EJ1V0DS
2
2SK3899
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 42 A
35
70
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 42 A
4.2
5.3
m
RDS(on)2
VGS = 4.5 V, ID = 42 A
4.9
6.5
m
Input Capacitance
Ciss
VDS = 10 V
5500
pF
Output Capacitance
Coss
VGS = 0 V
1050
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
350
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
19
ns
Rise Time
tr
VGS = 10 V
13
ns
Turn-off Delay Time
td(off)
RG = 0
91
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 48 V
96
nC
Gate to Source Charge
QGS
VGS = 10 V
18
nC
Gate to Drain Charge
QGD
ID = 84 A
23.5
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 84 A, VGS = 0 V
0.92
1.5
V
Reverse Recovery Time
trr
IF = 84 A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
70
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3717(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK371-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK371-V(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK3720-5-TB-E | 功能描述:MOSFET N-CH 15V 30MA 3CP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3727-01SC | 制造商:Fuji Electric 功能描述: |
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