- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30621 > 2SK3742 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3742 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 194K |
| 代理商： | 2SK3742 |
2SK3742
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3742
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 2.2 (typ.)
High forward transfer admittance: |Yfs| = 3.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
15
A
Drain power dissipation (Tc
= 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
595
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3748 | 4 A, 1500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3748 | 4 A, 1500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK374R | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK0374R | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK374Q | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3743(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3744-TL-E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。