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參數(shù)資料
| 型號(hào)： | 2SK3712-Z |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 9000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 封裝： | MP-3Z, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 119K |
| 代理商： | 2SK3712-Z |
Data Sheet D16372EJ3V0DS
2
2SK3712
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 4.5 A
3
6
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 4.5 A
0.45
0.58
Ω
Input Capacitance
Ciss
VDS = 10 V
450
pF
Output Capacitance
Coss
VGS = 0 V
100
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 4.5 A
8
ns
Rise Time
tr
VGS = 10 V
8
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
21
ns
Fall Time
tf
6
ns
Total Gate Charge
QG
VDD = 200 V
14
nC
Gate to Source Charge
QGS
VGS = 10 V
3
nC
Gate to Drain Charge
QGD
ID = 9.0 A
7
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 9 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 9 A, VGS = 0 V
150
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
630
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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