參數(shù)資料
型號: 2SK3712-Z
元件分類: 小信號晶體管
英文描述: 9000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
封裝: MP-3Z, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 119K
代理商: 2SK3712-Z
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2002
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16372EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
High voltage: VDSS = 250 V
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 0.58
Ω MAX. (VGS = 10 V, ID = 4.5 A)
Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±9.0
A
Drain Current (pulse)
Note1
ID(pulse)
±27
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
9
A
Single Avalanche Energy
Note2
EAS
8.1
mJ
Repetitive Avalanche Current
Note3
IAR
9
A
Repetitive Pulse Avalanche Energy
Note3
EAR
8.1
mJ
Notes 1. PW
≤ 10
μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20
→ 0 V, L = 100
μH
3. Tch(peak)
≤ 150°C, L = 100
μH
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3712
TO-251 (MP-3)
2SK3712-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
相關PDF資料
PDF描述
2SK3713-SK 10 A, 600 V, 0.83 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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2SK3716 60000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
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