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參數(shù)資料
| 型號： | 2SK3706 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220ML, FULL PACK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3706 |
2SK3706
No.7766-1/5
Features
Low ON-resistance.
4V drive.
Motor driver, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
12
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
48
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
18
mJ
Avalanche Current *2
IAV
12
A
*1 VDD=20V, L=200H, IAV=12A
*2 L
≤200H, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=6A
7
10
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=6A, VGS=10V
100
130
m
RDS(on)2
ID=6A, VGS=4V
120
160
m
Marking : K3706
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7766
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
73004QA TS IM TA-101121
2SK3706
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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PDF描述 |
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| 2SK372-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK372 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK372-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK373-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK373-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3706-MG5 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SK3707 | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3707-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Ammo Pack |
| 2SK3708 | 功能描述:MOSFET N-CH 100V 30A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3709 | 功能描述:MOSFET N-CH 100V 37A TO-220ML RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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