- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50004 > 2SK372 N-CHANNEL, Si, SMALL SIGNAL, JFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK372 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 336K |
| 代理商： | 2SK372 |
2SK372
2004-07-20
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog－Switch, Constant-Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 40 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)
Small package
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 A
40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.3
1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
25
60
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
15
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
20
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Typical IDSS rating = 15 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK372-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK373-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK373-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK3755 | 45 A, 40 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3787-01MR | 4.2 A, 800 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3720-5-TB-E | 功能描述:MOSFET N-CH 15V 30MA 3CP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3727-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3728-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK372-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 30mA Si 3-Pin Mini |
| 2SK372-GR(F) | 制造商:Toshiba 功能描述:Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。