- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50004 > 2SK367 N-CHANNEL, Si, SMALL SIGNAL, JFET PDF資料下載
參數(shù)資料
| 型號： | 2SK367 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1B, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 633K |
| 代理商： | 2SK367 |
2SK367
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK367
For Audio, High Voltage Amplifier and Constant Current
Applications
High breakdown voltage: VGDS = 100 V (min)
High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
100
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 80 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
100
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.6
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.4
3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4.6
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDS = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF
VDS = 10 V, VGS = 0, RG = 100 kΩ,
f
= 100 Hz
0.5
dB
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK367-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK367-O | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3685-01 | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK3689-01 | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK369-BL | 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
| 2SK3670(T6CANO,A,F | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
| 2SK3670(T6CANO,F,M | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
| 2SK3670,F(J | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。