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參數(shù)資料
| 型號(hào)： | 2SK3570 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 82K |
| 代理商： | 2SK3570 |
Data Sheet D16256EJ2V0DS
6
2SK3570
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
φ
4
3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5
6
1
1
1.3±0.2
0.5±0.2
2.8±0.2
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8
1
1.3±0.2
0.5±0.2
2.8±0.2
1
4
3) TO-263 (MP-25ZK)
10.0±0.2
8
2.54
0.7±0.15
9
2
1
1
1
2
3
4
2
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8
o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
0.25
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
3
1
4
4.8 MAX.
1.3±0.2
0.5±0.2
05RTYP
08RTYP
0.75±0.3
2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note
This package is produced only in Japan.
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used, an
additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3570-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3570-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3570-ZK | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3572 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3572-S | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3570-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3572-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
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