參數(shù)資料
型號(hào): 2SK3570-Z
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 1/8頁
文件大小: 82K
代理商: 2SK3570-Z
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2002
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D16256EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark
!
shows major revised points.
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5V drive available.
Low on-state resistance,
R
DS(on)1
= 12 m
MAX. (V
GS
= 10 V, I
D
= 24 A)
Low gate charge
Q
G
= 23 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 48 A)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
I
D(DC)
±
48
A
I
D(pulse)
±
160
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
29
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
10
μ
s, Duty Cycle
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK
TO-263
2SK3570-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in Japan.
#
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