參數(shù)資料
型號(hào): 2SK3554
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: N溝道功率MOSFET硅
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 111K
代理商: 2SK3554
3
2SK3554-01
FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=72V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
V
Tch [
°
C]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
96V
72V
Vcc= 36V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
相關(guān)PDF資料
PDF描述
2SK3554-01 N-CHANNEL SILICON POWER MOSFET
2SK3556-01L N-CHANNEL SILICON POWER MOSFET
2SK3556-01S N-CHANNEL SILICON POWER MOSFET
2SK3556-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3556 N-CHANNEL SILICON POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3554-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 75 Milliohms;ID +/-37A;TO-220AB;PD 270W;-55
2SK3554-01SC 制造商:Fuji Electric 功能描述:
2SK3555-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3557-6-TB-E 功能描述:射頻JFET晶體管 LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
2SK3557-7-TB-E 功能描述:MOSFET LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube