- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370115 > 2SK3541 (Rohm CO.,LTD.) Small switching (30V, 0.1A) PDF資料下載
參數(shù)資料
| 型號： | 2SK3541 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (30V, 0.1A) |
| 中文描述： | 小開關(guān)（30V的，0.1A） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 86K |
| 代理商： | 2SK3541 |
2SK3541
Transistor
0.001
1
2
50
S
O
D
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=
4V
Pulsed
Fig.4 Static drain-source on-state
resistance vs. drain current (
Ι
)
0.001
1
2
50
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
S
O
D
)
V
GS
=
2.5V
Pulsed
DRAIN CURRENT : I
D
(A)
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
Fig.5 Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=
0.1A
S
O
D
)
Ta
=
25
°
C
Pulsed
I
D
=
0.05A
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
°
C)
25
50
75
100
125
2
1
4
5
7
8
V
GS
=
4V
Pulsed
I
D
=
100mA
I
D
=
50mA
S
O
D
)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.0001
0.001
0.01
0.02
0.5
F
A
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
Ta
=
25
°
C
25
°
C
75
°
C
125
°
C
V
DS
=
3V
Pulsed
Fig.8 Forward transfer
admittance vs. drain current
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=
0V
Pulsed
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
Fig.9 Reverse drain current vs.
source-drain voltage (
Ι
)
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta
=
25
°
C
Pulsed
V
GS
=
4V
0V
Fig.10 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
0.1
1
2
50
C
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2
0.5
1
2
5
10
20
50
5
10
20
C
iss
C
oss
C
rss
Ta
=
25
°
C
f
=
1MH
Z
V
GS
=
0V
Fig.11 Typical capacitance vs.
drain-source voltage
0.1
10
20
500
S
DRAIN CURRENT : I
D
(mA)
5
0.2
0.5
1
2
5
10
20
50
50
100
200
1000
2
100
Ta
=
25
°
C
V
DD
=
5V
V
GS
=
5V
R
G
=
10
Pulsed
t
d(off)
t
r
t
d(on)
t
f
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3566 | Silicon N-Channel MOS FET, High Speed Power Switching |
| 2SK512 | SILICON C-CHANNEL MOSFET HIGH SPEED POWER SWITCHING |
| 2SK3570 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3570-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3570-Z | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3541GT2L | 制造商:ROHM Semiconductor 功能描述:SMALL SIGNAL TRANSISTORS |
| 2SK3541T2L | 功能描述:MOSFET N-CH 30V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3541T2L-CUT TAPE | 制造商:ROHM 功能描述:Single N-Channel 150 mW 30 V 13 Ohm Surface Mount 2.5 V Drive MosFet - VMT-3 |
| 2SK3543(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 450V 2A 3-Pin SC-67 制造商:Toshiba 功能描述:Trans MOSFET N-CH 450V 2A 3-Pin SC-67 Cut Tape |
| 2SK3546G0L | 功能描述:MOSFET N-CH 50V .1A SS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。