參數(shù)資料
型號(hào)： 2SK3484-Z
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 144K
代理商： 2SK3484-Z
Data Sheet D15069EJ2V0DS
2
2SK3484
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 8 A
4.7
9.5
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 8 A
100
125
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 8 A
110
148
m
Input Capacitance
C
iss
V
DS
= 10 V
900
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50 V, I
D
= 8 A
9.0
ns
Rise Time
t
r
V
GS
= 10 V
5.0
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
30
ns
Fall Time
t
f
4.0
ns
Total Gate Charge
Q
G
V
DD
= 80 V
20
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.0
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 16 A
5.0
nC
V
F(S-D)
I
F
= 16 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 16 A, V
GS
= 0 V
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
122
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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