參數(shù)資料
型號(hào): 2SK3483-AZ
元件分類(lèi): 小信號(hào)晶體管
英文描述: 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封裝: TO-251, MP-3, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 164K
代理商: 2SK3483-AZ
Data Sheet
D15068EJ2V0DS
5
2SK3483
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
20
40
60
80
100
120
-50 -25
0
25
50
75 100 125 150 175
Pulsed
10 V
VGS = 4.5 V
10
100
1000
10000
0.01
0.1
1
10
100
VGS = 0 V
f = 1MHz
Ciss
Coss
Crss
R
DS(
on)
-Drain
to
Source
On-state
Resistance
-m
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
on)
,t
r,t
d(
off)
,t
f-
Switching
Time
-ns
1
10
100
1000
0.1
1
10
100
VDD = 50 V
VGS = 10 V
RG = 0
td(off)
td(on)
tf
tr
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
30
40
50
60
70
80
90
100
0
5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
ID = 28 A
VDS
VGS
VDD = 80 V
50 V
20 V
V
GS
-
Gate
to
Drain
Voltage
-
V
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
ISD
-Diode
Forward
Current
-A
0.01
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
Pulsed
0 V
VGS = 10 V
trr
-Rev
ers
eRec
ov
ery
Ti
me
-ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A /
s
VGS = 0 V
VSD - Source to Drain Voltage - V
IF - Drain Current - A
相關(guān)PDF資料
PDF描述
2SK3484-Z 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3484 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3483-Z 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3483-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-252
2SK3483-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3483-Z-E2-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3484 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET