參數(shù)資料
型號: 2SK3483-AZ
元件分類: 小信號晶體管
英文描述: 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封裝: TO-251, MP-3, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 164K
代理商: 2SK3483-AZ
Data Sheet
D15068EJ2V0DS
2
2SK3483
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 14 A
9.0
18
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 14 A
41
52
m
RDS(on)2
VGS = 4.5 V, ID = 14 A
45
59
m
Input Capacitance
Ciss
VDS = 10 V
2300
pF
Output Capacitance
Coss
VGS = 0 V
230
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 14 A
12
ns
Rise Time
tr
VGS = 10 V
9
ns
Turn-off Delay Time
td(off)
RG = 0
53
ns
Fall Time
tf
5
ns
Total Gate Charge
QG
VDD = 80 V
49
nC
Gate to Source Charge
QGS
VGS = 10 V
7
nC
Gate to Drain Charge
QGD
ID = 28 A
13
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 28 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 28 A, VGS = 0 V
73
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
175
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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