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參數(shù)資料
| 型號： | 2SK3482 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 2SK3482 |
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MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15064EJ3V0DS00 (3rd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2001
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 33 m
Ω MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 39 m
Ω MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 3600 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±36
A
Drain Current (Pulse)
Note1
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT
50
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
30
A
Single Avalanche Energy
Note2
EAS
90
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25
Ω, VGS = 20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3482
TO-251 (MP-3)
2SK3482-Z
TO-252 (MP-3Z)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3483-Z | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3483 | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3535-01 | 3.4 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3572-AZ | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3572-ZK | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3482-AZ | 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3482-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3482-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 100V 36A 33m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 |
| 2SK3482-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 T/R |
| 2SK3482-Z-E2-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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