參數(shù)資料
型號： 2SK3535-01
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： 3.4 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TFP, 4 PIN
文件頁數(shù)： 1/4頁
文件大小： 113K
代理商： 2SK3535-01
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
250
VDSX
220
Continuous drain current
ID
±37
±3.4
*4
Pulsed drain current
ID(puls]
±148
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
37
Maximum Avalanche Energy
EAS
*1
251.9
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
2.4
*4
270
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics atTc =25°C ( unless otherwise specified)
Thermalcharacteristics
2SK3535-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A
VGS=10V
ID=12.5A
VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
Rth(ch-a)
*4
channel to ambient
0.463
87.0
52.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=25A
VGS=10V
L=309 H Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
250
3.0
5.0
25
250
10
100
75
100
816
2000
3000
220
330
15
30
20
30
45
60
90
20
30
44
66
14
21
16
24
37
1.10
1.65
0.45
1.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
VGS=30V
Ta=25°C
VDS 250V
Ta=25°C
=
<
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
200304
相關(guān)PDF資料
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參數(shù)描述
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