參數(shù)資料
型號(hào): 2SK3482
廠(chǎng)商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 165K
代理商: 2SK3482
Data Sheet
D15064EJ2V0DS
5
2SK3482
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
Pulsed
V
GS
= 4.5 V
10 V
10
100
1000
10000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
R
D
T
ch
- Channel Temperature -
°
C
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
1000
0.1
1
10
100
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
t
d(off)
td(on)
t
r
t
f
V
D
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
I
D
= 36 A
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
V
G
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
S
0.01
0.1
1
10
100
0.0
0.5
1.0
1.5
Pulsed
0 V
V
GS
= 10 V
t
r
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μ
s
V
GS
= 0 V
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
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