參數(shù)資料
型號: 2SK3482
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 4/8頁
文件大?。?/td> 165K
代理商: 2SK3482
Data Sheet
D15064EJ2V0DS
4
2SK3482
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
Pulsed
V
GS
= 10 V
4.5 V
I
D
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
= 150°C
75°C
-25°C
-40°C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
25
50
75
100
125
150
V
SD
= 10 V
I
D
= 1mA
|
f
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
D S
= 10V
P ulsed
T
A
= 150°C
75°C
-40°C
25°C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
0.1
1
10
100
10 V
Pulsed
V
G S
= 4.5V
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
Pulsed
I
D
= 36 A
18 A
7.2 A
R
D
I
D
- Drain Current - A
R
D
V
GS
- Gate to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3482-AZ 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3482-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
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2SK3482-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 T/R
2SK3482-Z-E2-AZ 制造商:Renesas Electronics Corporation 功能描述: