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參數(shù)資料
| 型號： | 2SK3461L-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 229K |
| 代理商： | 2SK3461L-E |
2SK3461(L), 2SK3461(S)
Rev.3.00 May 15, 2006 page 5 of 8
Source to Drain Voltage
VSDF (V)
Reverse
Drain
Current
I
F
(A)
Reverse Drain Current vs.
Source to Drain Voltage
400
25
50
75
100
125
150
0
80
160
240
320
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = 60 A
VDD = 15 V
duty < 0.1 %
Rg
≥ 50
100
0
20
40
60
80
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0, –5 V
10 V
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 1.14°C/W, Tc = 25°C
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
L IAP
2
2
1
VDSS
VDSS – VDD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
L
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