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參數(shù)資料
| 型號(hào)： | 2SK3461L-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 229K |
| 代理商： | 2SK3461L-E |
2SK3461(L), 2SK3461(S)
Rev.3.00 May 15, 2006 page 3 of 8
Main Characteristics
160
0
40
80
120
50
100
150
200
300
100
30
10
1
3
0.1
0.3
1
3
10
30
100
0
20
40
60
80
24
6
8
10
100
0
20
40
60
80
12
34
5
0.3
0.1
1000
Ta = 25°C
VGS = 2.5 V
3 V
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Operation in
this area is
limited by RDS(on)
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Pulse Test
0
0.1
0.3
0.2
0.4
4
8
12
16
20
1
30
1000
10
3300
100
10
30
3
1
0.3
0.1
0.5
ID = 50 A
20 A
10 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS(on)
(V)
Pulse Test
Drain
to
Source
on
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current
ID (A)
10
s
PW
= 10
ms
(1shot)
DC
Operation
(Tc
=
25°C)
VGS = 4 V
10 V
Pulse Test
1 ms
100
s
5 V
4 V
Tc = –25°C
25°C
75°C
10 V
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